KTB1367 transistors equivalent, silicon pnp power transistors.
*Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
*Collector Power Dissipation-
: PC= 30W@ TC= 25℃
*Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A)
*Complement to Type KTD2059
*Minimum Lot.
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